![PDF] GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/bf2104a238e0868597079bd0e9cc516b4d452449/3-Figure1-1.png "PDF] GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction | Semantic Scholar")
PDF] GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction | Semantic Scholar
Copper- and chloride-mediated synthesis and optoelectronic trapping of ultra-high aspect ratio palladium nanowires - Journal of Materials Chemistry A (RSC Publishing)
Invited) Aspect Ratio Trapping: A Unique Technology for Integrating Ge and III-Vs with Silicon CMOS
Figure 1 from Defect formation in III–V fin grown by aspect ratio trapping technique: A first-principles study | Semantic Scholar
Micromachines | Free Full-Text | Wafer-Scale Fabrication of Ultra-High Aspect Ratio, Microscale Silicon Structures with Smooth Sidewalls Using Metal Assisted Chemical Etching
US8173551B2 - Defect reduction using aspect ratio trapping - Google Patents
Invited) Aspect Ratio Trapping: A Unique Technology for Integrating Ge and III-Vs with Silicon CMOS
PTC Website
Invited) Aspect Ratio Trapping: A Unique Technology for Integrating Ge and III-Vs with Silicon CMOS
化合物レーザーをシリコンにモノリシック集積する試み（前編）：福田昭のデバイス通信（166） imecが語る最新のシリコンフォトニクス技術（26）（2/2 ページ） - EE Times Japan
Aspect ratio design considerations. (A) Examples of acceptable and... | Download Scientific Diagram
A) Conventional aspect ratio trapping method with III–V epitaxial... | Download Scientific Diagram
Varying the aspect ratio of toroidal ion traps: Implications for design, performance, and miniaturization - ScienceDirect
2008 IEDM presentation | PPT
Aspect Ratio - an overview | ScienceDirect Topics
Aspect ratio trapping heteroepitaxy for integration of germanium and compound semiconductors on silicon | Semantic Scholar
Aspect ratio trapping heteroepitaxy for integration of germanium and compound semiconductors on silicon | Semantic Scholar
A) Conventional aspect ratio trapping method with III–V epitaxial... | Download Scientific Diagram
Process Innovations Enabling Next-Gen SoCs and Memories
a) Schematic showing the defect trapping and growth mechanism of the... | Download Scientific Diagram
Improving defectivity for III-V CMP processes for <10 nm technology nodes | Semantic Scholar
2008 IEDM presentation | PPT
Schematic diagrams of Ge on Si Esaki diode via aspect ratio trapping... | Download Scientific Diagram
PTC Website
